Please use this identifier to cite or link to this item:
https://hdl.handle.net/11499/10024
Title: | A Bulk-Micromachined Three-Axis Capacitive MEMS Accelerometer on a Single Die | Authors: | Tez, Serdar. Aykutlu, U. Torunbalci, M.M. Akin, T. |
Keywords: | double glass modified silicon on glass (DGM-SOG) glass-silicon-glass Three-axis capacitive microelectromechanical system (MEMS) accelerometer Application specific integrated circuits Electromechanical devices Electron beam lithography Floors Glass Glass bonding MEMS Reactive ion etching Silicon Silicon on insulator technology Silicon wafers Substrates Wafer bonding Capacitive accelerometers Capacitive microelectromechanical systems (MEMS) Deep Reactive Ion Etching Differential accelerometers Fabrication process Low noise performance Silicon on insulator wafers Z-axis accelerometer Accelerometers |
Publisher: | Institute of Electrical and Electronics Engineers Inc. | Abstract: | This paper presents a high-performance three-axis capacitive microelectromechanical system (MEMS) accelerometer implemented by fabricating individual lateral and vertical differential accelerometers in the same die. The fabrication process is based on the formation of a glass-silicon-glass multi-stack. First, a 35-µm thick '111' silicon structural layer of an Silicon-On-Insulator (SOI) wafer is patterned with deep reactive ion etching (DRIE) and attached on a base glass substrate with anodic bonding, whose handle layer is later removed. Next, the second glass wafer is placed on the top of the structure not only for allowing to implement a top electrode for the vertical accelerometer, but also for acting as an inherent cap for the entire structure. The fabricated three-axis MEMS capacitive accelerometer die measures 12 × 7 × 1 mm3. The x-axis and y-axis accelerometers demonstrate measured noise floors and bias instabilities equal to or better than 5.5 µg/?Hz and 2.2 µg, respectively, while the z-axis accelerometer demonstrates 12.6 µg/?Hz noise floor and 17.4 µg bias instability values using hybrid-connected fourth-order sigma-delta CMOS application specific integrated circuit (ASIC) chips. These low noise performances are achieved with a measurement range of over ±10 g for the x-axis and y-axis accelerometers and +12/-7.5 g for the z-axis accelerometer, suggesting their potential use in navigation grade applications. [2014-0351]. © 1992-2012 IEEE. | URI: | https://hdl.handle.net/11499/10024 https://doi.org/10.1109/JMEMS.2015.2451079 |
ISSN: | 1057-7157 |
Appears in Collections: | Mühendislik Fakültesi Koleksiyonu Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
Show full item record
CORE Recommender
SCOPUSTM
Citations
68
checked on Aug 17, 2024
WEB OF SCIENCETM
Citations
61
checked on Aug 9, 2024
Page view(s)
50
checked on Aug 24, 2024
Google ScholarTM
Check
Altmetric
Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.