Please use this identifier to cite or link to this item: https://hdl.handle.net/11499/4326
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dc.contributor.authorKarabulut, Orhan-
dc.contributor.authorParlak, M.-
dc.contributor.authorMamedov, G.M.-
dc.date.accessioned2019-08-16T11:33:25Z
dc.date.available2019-08-16T11:33:25Z
dc.date.issued2007-
dc.identifier.issn0925-8388-
dc.identifier.urihttps://hdl.handle.net/11499/4326-
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2006.04.010-
dc.description.abstractSystematic investigations of crystal structure, electrical conductivity and photoconductivity have been carried out on the complete series of TlGa(SxSe1-x)2 solid solutions. X-ray diffraction (XRD) analyses together with TREOR90 computer program have revealed that this compound shows different structural modifications at each composition. The possible charge transfer mechanisms have been investigated by performing temperature dependent electrical conductivity measurements in the temperature range of 100-400 K for different values of x. Information about the band gap of these composite solution have been investigated by means of spectral distribution of photocurrent as a function of x. Temperature dependent photoconductivity behaviour and characteristics of the recombination centers have also been investigated by measuring photocurrent at various illumination intensities and applied electric fields in the studied temperature range. © 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoenen_US
dc.relation.ispartofJournal of Alloys and Compoundsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCrystal growthen_US
dc.subjectElectrical transporten_US
dc.subjectImpurities in semiconductorsen_US
dc.subjectSemiconductorsen_US
dc.subjectX-ray diffractionen_US
dc.subjectChemical modificationen_US
dc.subjectCrystal structureen_US
dc.subjectElectric conductivityen_US
dc.subjectPhotoconductivityen_US
dc.subjectPhotocurrentsen_US
dc.subjectX ray diffractionen_US
dc.subjectStructural modificationsen_US
dc.subjectCrystalline materialsen_US
dc.titleStructural and electrical properties of TlGa(SxSe1-x)2 mixed crystalsen_US
dc.typeArticleen_US
dc.identifier.volume429en_US
dc.identifier.issue1-2en_US
dc.identifier.startpage50
dc.identifier.startpage50en_US
dc.identifier.endpage55en_US
dc.authorid0000-0001-9406-8441-
dc.identifier.doi10.1016/j.jallcom.2006.04.010-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopus2-s2.0-33846606830en_US
dc.identifier.wosWOS:000244673100010en_US
dc.identifier.scopusqualityQ1-
dc.ownerPamukkale University-
item.languageiso639-1en-
item.openairetypeArticle-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
crisitem.author.dept17.03. Physics-
Appears in Collections:Fen-Edebiyat Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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