Please use this identifier to cite or link to this item: https://hdl.handle.net/11499/4812
Title: Optical anisotropy in GaSe
Authors: Seyhan, A.
Karabulut, Orhan.
Akmo?lu, B.G.
Aslan, B.
Turan, R.
Keywords: GaSe
Optical anisotropy
Photoluminescence
Anisotropy
Band structure
Fourier transform infrared spectroscopy
Light propagation
Semiconducting selenium compounds
Anisotropic band structure
Emission bands
Semiconducting germanium compounds
Abstract: Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k?c) and parallel to the c-axis (k//c). Peak position of the PL emission band and the onset of the transmission have been found to be significantly different for these two cases. This observed anisotropy is related to anisotropic band structure and the selection rules for the optical absorption in layered GaSe. FTIR transmission spectrum is in good agreement with PL results. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI: https://hdl.handle.net/11499/4812
https://doi.org/10.1002/crat.200410452
ISSN: 0232-1300
Appears in Collections:Fen-Edebiyat Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

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