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https://hdl.handle.net/11499/59301
Title: | Polyoxometalate-Doped Hole Transport Layer To Boost Performance of Mapbi3-Based Inverted-Type Perovskite Solar Cells | Authors: | Buyukcelebi, S. Kazici, M. Torlak, Y. Kus, M. Ersoz, M. |
Publisher: | American Chemical Society | Abstract: | This study delves into the examination of the efficiency, stability, and repeatability of perovskite solar cells (PSCs), a focal point in contemporary photovoltaic (PV) technologies. The aim is to address the challenges encountered in PSCs. To achieve this goal, Ge-doped polyoxometalate, a structure of significance in recent molecular electronics, was employed as a dopant in the hole transport layer (HTL). The study investigated alterations in the conductivity, improvements in efficiency, and changes in PV parameters. The utilization of PEDOT/PSS doped with a maximum of 2% GePOM resulted in an average efficiency increase of 27% in PSCs compared with the reference. Moreover, enhancements in stability and repeatability were also noted. Comparatively, the reference PSC operated at an efficiency of 11.18%, while PSCs incorporating 2% GePOM into PEDOT/PSS as the HTL exhibited a notable increase in the efficiency, reaching 14.22%. Furthermore, the champion device exhibited an observed fill factor value of 0.74, a short-circuit current density (Jsc) value of 19.78 mA/cm2, and an open-circuit voltage (Voc) value of 0.98 V. Consequently, noteworthy enhancements have been noticed in the PV parameters of PSCs with the introduction of GePOM doping. © 2025 The Authors. Published by American Chemical Society. | URI: | https://doi.org/10.1021/acsomega.4c01242 https://hdl.handle.net/11499/59301 |
ISSN: | 2470-1343 |
Appears in Collections: | Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection |
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