Electrical and optical properties of Co doped TlGaS2 crystals

Abstract

In this study, Co doped TlGaS2 single crystals which belongs to the class of AIIIBIIIX2VI have been investigated by means of XRD, temperature dependent dark and illuminated conductivity, Space Charge Limited Currents and absorption measurements. The room temperature conductivity and trap concentration values were about 10 -8 (?-cm)-1 and 7.5 Ã - 1013 cm-3, respectively. From the temperature dependent conductivity measurements, two activation energies namely 271 and 12 meV have been determined in the high and low temperature regions, respectively. The trap level at 271 meV that was determined by the dark temperature dependent conductivity measurement has also been verified by Space Charge Limited Currents analysis. The absorption measurements have showed that the layered compound had indirect and direct band gaps and the values were determined to be 2.49 and 2.56 eV, respectively. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.