The analysis of a semiconductor step-index single wave guide by alpha method

Abstract

In this work, a semiconductor step-index single wave guide (SCSISWG) has been analyzed by alpha method. A requested quantity of the wave guide can be obtained in terms of normalized propagation constant, which is represented by alpha ( ? ), belonging to active region. This alpha method based on structural property of material contains that requested any quantity of the wave guide can be theoretically calculated when the width of the active region, the refractive indices of the regions of SCSISWG and the wave length are given. In this study, there are important quantities, such as the propagation constants, the wave numbers, the absorption constants or confinement factors of the regions of SCSISWG and the effective index, the phase constant, the dielectric constant, the effective mass of electron, the arised power per length in the active region, the loss ratios of field probabilities stayed to the cladding layers from the active region and ? , ? coordinate variables for the energy eigenvalues of charged carriers in the perpendicular Cartesian coordinate system ? - ? . In the paper, the formulas of these quantities have been found in terms of alpha ( ? ) theoretically and the validities of the found formulas have been tested, numerically. Since the effective refractive index belong to the active region is constant, that the quantities such as the phase constant, the phase velocity, the dielectric constant, the variables ? , ? , the field amplitudes, the resultant power per length, and the effective mass of electron do not change in the active region in the each of the asymmetric and symmetric cases for wave guides has been observed.