Please use this identifier to cite or link to this item: https://hdl.handle.net/11499/9136
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTez, Serdar-
dc.contributor.authorTorunbalci, M.M.-
dc.contributor.authorAkin, T.-
dc.date.accessioned2019-08-16T12:58:32Z
dc.date.available2019-08-16T12:58:32Z
dc.date.issued2017-
dc.identifier.isbn19300395 (ISSN)-
dc.identifier.isbn9781479982875-
dc.identifier.urihttps://hdl.handle.net/11499/9136-
dc.identifier.urihttps://doi.org/10.1109/ICSENS.2016.7808705-
dc.description.abstractThis paper presents a novel method for the fabrication of three-axis capacitive MEMS accelerometers by using low-temperature Au-Sn eutectic bonding that is applied to form a glass-silicon-glass multi-stack. The proposed method provides the implementation of individual in-plane and out-of-plane accelerometer elements in the same die using a glass-silicon-glass multi-stack structure formed at temperatures as low as 300°C while still ensuring the advantages of the previous approaches such as the voltage free bonding, inherent capping, and the differential sensing. The initial prototypes are verified to be functional and mechanically strong (>9.5MPa) by C-V measurements and shear strength tests. © 2016 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectglass-silicon-glass multi-stacken_US
dc.subjectGold-Tin eutectic bondingen_US
dc.subjectMEMS three-axis accelerometeren_US
dc.subjectAccelerometersen_US
dc.subjectEutecticsen_US
dc.subjectGlassen_US
dc.subjectSiliconen_US
dc.subjectTemperatureen_US
dc.subjectTinen_US
dc.subjectC-V measurementen_US
dc.subjectEutectic bondingen_US
dc.subjectLow temperaturesen_US
dc.subjectMEMS accelerometeren_US
dc.subjectShear strength testsen_US
dc.subjectSilicon glassen_US
dc.subjectStack structureen_US
dc.subjectThree axis accelerometersen_US
dc.subjectGlass bondingen_US
dc.titleA novel method for fabricating MEMS three-axis accelerometers using low temperature Au-Sn eutectic bondingen_US
dc.typeConference Objecten_US
dc.authorid0000-0003-3962-7284-
dc.identifier.doi10.1109/ICSENS.2016.7808705-
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.identifier.scopus2-s2.0-85010952794en_US
dc.identifier.wosWOS:000399395700294en_US
dc.ownerPamukkale University-
item.openairetypeConference Object-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.cerifentitytypePublications-
crisitem.author.dept10.04. Electrical-Electronics Engineering-
crisitem.author.dept10.08. Geological Engineering-
Appears in Collections:Mühendislik Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Show simple item record



CORE Recommender

SCOPUSTM   
Citations

6
checked on Nov 23, 2024

WEB OF SCIENCETM
Citations

4
checked on Nov 22, 2024

Page view(s)

30
checked on Aug 24, 2024

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.