Simulation of storage time versus reverse bias current for p+n and pin diodes

Abstract

In this study, the reverse-recovery behaviors of pin and p+ n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+ n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined. © TÜBI•TAK.