Please use this identifier to cite or link to this item: https://hdl.handle.net/11499/6105
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKeserlioglu, Mehmet Serhat-
dc.contributor.authorErkaya, H.H.-
dc.date.accessioned2019-08-16T12:04:13Z-
dc.date.available2019-08-16T12:04:13Z-
dc.date.issued2011-
dc.identifier.issn1300-0632-
dc.identifier.urihttps://hdl.handle.net/11499/6105-
dc.identifier.urihttps://doi.org/10.3906/elk-0812-29-
dc.description.abstractIn this study, the reverse-recovery behaviors of pin and p+ n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+ n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined. © TÜBI•TAK.en_US
dc.language.isoenen_US
dc.relation.ispartofTurkish Journal of Electrical Engineering and Computer Sciencesen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPin diodeen_US
dc.subjectReverse recoveryen_US
dc.subjectSemiconductor devicesen_US
dc.subjectSemiconductor devices simulationen_US
dc.subject1-D simulationen_US
dc.subjectPartial differentialen_US
dc.subjectPiN diodeen_US
dc.subjectReverse biasen_US
dc.subjectReverse currentsen_US
dc.subjectSemiconductor equationsen_US
dc.subjectStorage timeen_US
dc.subjectTransient responseen_US
dc.subjectCarrier lifetimeen_US
dc.subjectDifferential equationsen_US
dc.subjectRecoveryen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSemiconductor switchesen_US
dc.subjectSemiconductor diodesen_US
dc.titleSimulation of storage time versus reverse bias current for p+n and pin diodesen_US
dc.typeArticleen_US
dc.identifier.volume19en_US
dc.identifier.issue1en_US
dc.identifier.startpage87en_US
dc.identifier.endpage96en_US
dc.identifier.doi10.3906/elk-0812-29-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopus2-s2.0-78650856554en_US
dc.identifier.trdizinid111427en_US
dc.identifier.wosWOS:000288230700007en_US
dc.identifier.scopusqualityQ3-
dc.ownerPamukkale University-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeArticle-
item.languageiso639-1en-
item.fulltextWith Fulltext-
crisitem.author.dept10.04. Electrical-Electronics Engineering-
Appears in Collections:Mühendislik Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
TR Dizin İndeksli Yayınlar Koleksiyonu / TR Dizin Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Files in This Item:
File SizeFormat 
064838c5-db65-4d75-ac5a-0d02e42180d1.pdf402.23 kBAdobe PDFView/Open
Show simple item record



CORE Recommender

SCOPUSTM   
Citations

1
checked on Oct 13, 2024

WEB OF SCIENCETM
Citations

1
checked on Nov 24, 2024

Page view(s)

50
checked on Aug 24, 2024

Download(s)

26
checked on Aug 24, 2024

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.