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https://hdl.handle.net/11499/6105| Title: | Simulation of storage time versus reverse bias current for p+n and pin diodes | Authors: | Keserlioglu, Mehmet Serhat Erkaya, H.H. |
Keywords: | Pin diode Reverse recovery Semiconductor devices Semiconductor devices simulation 1-D simulation Partial differential PiN diode Reverse bias Reverse currents Semiconductor equations Storage time Transient response Carrier lifetime Differential equations Recovery Semiconductor device manufacture Semiconductor switches Semiconductor diodes |
Abstract: | In this study, the reverse-recovery behaviors of pin and p+ n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+ n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined. © TÜBI•TAK. | URI: | https://hdl.handle.net/11499/6105 https://doi.org/10.3906/elk-0812-29 |
ISSN: | 1300-0632 |
| Appears in Collections: | Mühendislik Fakültesi Koleksiyonu Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection TR Dizin İndeksli Yayınlar Koleksiyonu / TR Dizin Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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| File | Size | Format | |
|---|---|---|---|
| 064838c5-db65-4d75-ac5a-0d02e42180d1.pdf | 402.23 kB | Adobe PDF | View/Open |
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