Please use this identifier to cite or link to this item: https://hdl.handle.net/11499/8880
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dc.contributor.authorYüce, Erkan-
dc.contributor.authorMinaei, S.-
dc.contributor.authorIbrahim, M.A.-
dc.date.accessioned2019-08-16T12:57:04Z
dc.date.available2019-08-16T12:57:04Z
dc.date.issued2017-
dc.identifier.issn0925-1030-
dc.identifier.urihttps://hdl.handle.net/11499/8880-
dc.identifier.urihttps://doi.org/10.1007/s10470-017-1033-0-
dc.description.abstractA novel topology for realizing voltage-mode (VM) full-wave rectifier/sinusoidal frequency doubler based on current feedback operational amplifiers (CFOAs) and n-channel metal-oxide semiconductor (NMOS) transistors is proposed in this study. The proposed full-wave rectifier structure employs two CFOAs and three enhancement-mode NMOS transistors. With a slight modification, the sinusoidal frequency doubler circuit can be adopted from the full-wave rectifier circuit by replacing a grounded resistor instead of one of the NMOS transistors. Both of the proposed circuits enjoy low output and high input impedance properties which make them convenient for cascading easily with other VM circuits without needing any extra buffer circuits. No passive component matching conditions are needed. The proposed circuits are simulated by using SPICE program to verify the theoretical analysis. © 2017, Springer Science+Business Media, LLC.en_US
dc.language.isoenen_US
dc.publisherSpringer New York LLCen_US
dc.relation.ispartofAnalog Integrated Circuits and Signal Processingen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCFOAen_US
dc.subjectFrequency doubleren_US
dc.subjectFull-wave rectifieren_US
dc.subjectLow output and high input impedancesen_US
dc.subjectNMOS transistorsen_US
dc.subjectBuffer circuitsen_US
dc.subjectElectric impedanceen_US
dc.subjectElectric impedance measurementen_US
dc.subjectElectric network analysisen_US
dc.subjectFeedback amplifiersen_US
dc.subjectFrequency doublersen_US
dc.subjectMetalsen_US
dc.subjectMOS devicesen_US
dc.subjectOperational amplifiersen_US
dc.subjectOxide semiconductorsen_US
dc.subjectRectifying circuitsen_US
dc.subjectSPICEen_US
dc.subjectTopologyen_US
dc.subjectTransistorsen_US
dc.subjectFull-wave rectifiersen_US
dc.subjectGrounded resistorsen_US
dc.subjectHigh input impedanceen_US
dc.subjectMatching conditionen_US
dc.subjectMetal oxide semiconductoren_US
dc.subjectSinusoidal frequencyen_US
dc.subjectElectric rectifiersen_US
dc.titleA novel full-wave rectifier/sinusoidal frequency doubler topology based on CFOAsen_US
dc.typeArticleen_US
dc.identifier.volume93en_US
dc.identifier.issue2en_US
dc.identifier.startpage351
dc.identifier.startpage351en_US
dc.identifier.endpage362en_US
dc.identifier.doi10.1007/s10470-017-1033-0-
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.scopus2-s2.0-85027895799en_US
dc.identifier.wosWOS:000412447300016en_US
dc.identifier.scopusqualityQ3-
dc.ownerPamukkale University-
item.languageiso639-1en-
item.openairetypeArticle-
item.grantfulltextopen-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
crisitem.author.dept10.04. Electrical-Electronics Engineering-
Appears in Collections:Mühendislik Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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